A strong effort is has been devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This book provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced diffusion and dopant clustering; damage evolution and extended defects and gettering procedures.
A snapshot of the current understanding of ion implantation, diffusion, gettering, and other challenging phenomena of importance to processing silicon devices. The 80 or so papers highlight such aspects the development of reliable, predictive, and quantitative simulation tools; new experimental and theoretical insights on cluster formation and dissolution in ion-implanted crystalline silicon; techniques such as deep-level transient spectroscopy, scanning tunneling microscopy, and x-ray scattering to monitor defect evolution; and the potential of low-energy ion implantation to provide the shallow junctions needed for the next ULSI generation of devices. Annotation c. by Book News, Inc., Portland, Or.
