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Overview
Heterojunction bipolar transistors (HBTs) are high-performance transistor structures, and accurate HBT modeling is indispensable in helping engineers and designers achieve single-pass circuit design success. This first-of-its-kind guide provides complete hands-on understanding of available HBT models and the parameter strategies needed to use them effectively in circuit simulation. The book presents detailed coverage of state-of-the-art tools that help designers select the best model to meet specific design requirements, know what physical effects to expect, and modify or create new models to optimize simulation accuracy. Emphasizing "how to" procedures without getting bogged down in device physics, this indispensable guide puts the full power of active device modeling and circuit simulation at the designer's command.
Synopsis
This one-stop resource helps microwave and semiconductor engineers master powerful GaAs HBT (heterojunction bipolar transistor) modeling techniques and offers insight into compact HBT modeling strategies from a circuit designer's point of view. It provides detailed coverage of state-of-the-art tools that help practitioners select the best model to meet specific design requirements, know what physical effects to expect, and modify or create new models to optimize simulation accuracy and to enhance the chance of achieving single-pass success in circuit design.
Supported by more than 500 equations and 130 illustrations, this book offers full documentation and guidance to deploy HBT models ranging from Gummel-Poon and VBIC to UCSD, Agilent, and FBH models.