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Overview
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.The properties of DX and EL2 centers in III-V compounds are presented and a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The effects of such defects in a number of devices are discussed.Synopsis
A thorough review of the properties of deep-level, localized defects in semiconductors.
Booknews
A complete overview of the properties of deep-level, localized defects in semiconductors that can be created or destroyed by light examines the long lived (metastable) defects in terms of configurational coordinate diagrams, energy bands, and energy levels. DX and ELS centers in III-V compounds and crystalline materials are discussed, along with descriptions of hydrogenated amorphous silicon, and photoinduced defects in devices, xerography, solar cells, and thin film transistors. Annotation c. Book News, Inc., Portland, OR (booknews.com)