Overview
Characterization in Silicon Processing reviews characterization techniques of interest to silicon processing engineers. Increasingly stringent materials requirements, such as decreasing barrier film thicknesses, have prompted a need for improved materials quality and performance. In order to meet these high standards, process engineers must be familiar with modern techniques for characterization of microstructure and the relationship of microstructure to surface preparation and deposition techniques. This book covers the most recent advances in characterization, including: monitoring the effectiveness of surface cleaning processes such as morphology, residues, and chemical reactions; determining the amount of silicon consumption during barrier film and silicide growth on silicon; monitoring grain size and grain growth in aluminum—important for electromigration effects and in lithography; and silicon selective epitaxial growth.
This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to discuss typical problems seen throughout that films' history, including characterization tools which are most effectively used to clarifying and solving those problems
Synopsis
Characterization in Silicon Processing reviews characterization techniques of interest to silicon processing engineers. Increasingly stringent materials requirements, such as decreasing barrier film thicknesses, have prompted a need for improved materials quality and performance. In order to meet these high standards, process engineers must be familiar with modern techniques for characterization of microstructure and the relationship of microstructure to surface preparation and deposition techniques. This book covers the most recent advances in characterization, including: monitoring the effectiveness of surface cleaning processes such as morphology, residues, and chemical reactions; determining the amount of silicon consumption during barrier film and silicide growth on silicon; monitoring grain size and grain growth in aluminum—important for electromigration effects and in lithography; and silicon selective epitaxial growth.
Booknews
Reviews techniques by which silicon processing engineers working with semiconductors can meet the demands for improved material quality and performance made necessary by increasingly stringent requirements, such as decreasing barrier film thicknesses. Among the techniques described are monitoring the effectiveness of surface cleaning processes; determining the amount of silicon consumption during barrier film and silicide growth; and silicon selective epitaxial growth. Annotation c. Book News, Inc., Portland, OR (booknews.com)