Materials Science - General & Miscellaneous, Electronics - Circuits - Integrated, Electromagnetism - Electricity, Technology - General & Miscellaneous, Electronics - Microelectronics, Electronics - Semiconductors, Solid State Physics - General & Miscellan
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Overview
Gate Dielectrics focusses on dielectric films satisfying the superior quality gate dielectric even in large-scale integration. The information presented is rather up to date with regard to nanometer-range ultrathin gate-dielectric films, which are indispensible for submicrometer ULSIs.Synopsis
Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail.Book Details
Published
July 31, 2012
Publisher
Springer-Verlag New York, LLC
Pages
366
Format
Paperback
ISBN
9783642645877