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Chemical Elements, Electronics - Semiconductors, Solid State Physics - General & Miscellaneous
Process Technology for Silicon Carbide Devices (EMIS Processing Series) by C.M. Zetterling β€” book cover

Process Technology for Silicon Carbide Devices (EMIS Processing Series)

by C.M. M. Zetterling (Editor), B. L. Weiss
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Overview

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for for devices and integrated circuits operating at high voltage, high frequency and high temperature. The second book in the "EMIS Processing" series explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics, etc.) and describes how these are integrated in device manufacture.

Synopsis

Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for for devices and integrated circuits operating at high voltage, high frequency and high temperature. The second book in the "EMIS Processing" series explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics, etc.) and describes how these are integrated in device manufacture.

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Book Details

Published
November 1, 2002
Publisher
Institution of Engineering and Technology (IET)
Pages
176
Format
Hardcover
ISBN
9780852969984

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