Silicon Germanium

Three researchers at IBM trace the early development and history of silicon germanium (SiGe) technology at IBM, and overview the company's approach to device modeling, characterization, design automation, and signal integrity. They describe the compact modeling of active HBT and FET devices and advanced passive devices, RF simulation algorithms, electrostatic discharge CAD solutions, interconnect extraction and modeling, and the application of TCAD to substrate isolation. The last chapter presents implementations of a wired SONET 40-GB/s design, a 3G direct conversion receiver, a PA for cellular radio, and a high speed memory design. Annotation ©2004 Book News, Inc., Portland, OR

RAMINDERPAL SINGH, PhD, is a Senior Engineer at IBM’s RF/AMS Design Kit Group where he leads various projects related to transmission line model development, substrate modeling, and RF/mixed-signal design methodologies. Dr. Singh has authored numerous technical publications in the area of signal integrity, and is Director of VSIA, as well as a Senior Member of IEEE.
DAVID L. HARAME, PhD, is Director of the RF/Analog and Mixed Signal Process Development, Modeling, and Design Automation area at IBM. He is an IEEE Fellow, Executive Committee member of the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), and member of the Compact Model Council.
MODEST M. OPRYSKO, PhD, joined IBM in 1986 and has held numerous management positions directing technology and application development activities spanning the areas of fiber optics, wireless (infrared and radio frequency technology), packaging technology, and circuit design devoted to communications applications. Currently, he is the Senior Manager of Communication Link Architecture, Design and Test.